SEMICONDUCTOR IC AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor IC and a manufacturing method thereof are provided to prevent a crack or a failure of a base insulation film. CONSTITUTION: A semiconductor substrate structure(30) having a circuit device is prepared. An interlayer insulation film(36) is formed on an upper surface of the semiconductor substrate structure. A plurality of the second contact holes(h2) is formed by etching the interlayer insulation film in order to expose a plurality of parts of the surface of the semiconductor substrate structure. The metal wiring(48) for the bonding pad is formed by depositing a metal layer on an upper part of the interlayer film having the hole. The structure of the semiconductor substrate is formed by forming one or more interlayer insulation film on the upper part of the semiconductor substrate having an active device and forming one or more metal wiring on the upper part of the interlayer insulation film.