发明名称 |
Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip |
摘要 |
A ferro-electric random access memory (FRAM) chip, including a substrate; a first dielectric layer over the substrate; a gate over the first dielectric layer; a first aluminum oxide layer over the first dielectric layer and the gate; a second dielectric layer over the first aluminum oxide layer; a trench through the second dielectric layer and the first aluminum oxide layer to the gate; a hydrogen barrier liner over the second dielectric layer and lining the trench, and contacting the gate; and a silicon dioxide plug over the hydrogen barrier liner substantially filling the trench.
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申请公布号 |
US8395196(B2) |
申请公布日期 |
2013.03.12 |
申请号 |
US20100946915 |
申请日期 |
2010.11.16 |
申请人 |
CZABAJ BRIAN M.;HART, III JAMES V.;MURPHY WILLIAM J.;NAKOS JAMES S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CZABAJ BRIAN M.;HART, III JAMES V.;MURPHY WILLIAM J.;NAKOS JAMES S. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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