| 摘要 |
A method for profiling the perimeter border of a semiconductor chip, characterized by the following steps: the semiconductor chip is supported near to the perimeter border on supporting points which are spaced apart in the perimeter direction of the semiconductor chip, laser beams are directed to the perimeter border with the aid of at least two lasers or of two lens systems coupled with at least one laser, which are arranged on the perimeter of the laser chip, the lasers or lens systems and the semiconductor chip are rotated in relation to each other around the centre of the semiconductor chip, and the lasers or lens systems are moved in a plane vertical to the rotational plane such that portions of the perimeter border between the supporting points are profiled by laser irradiation, subsequently, the supporting points on the semiconductor chip are changed and the remaining border portions of the perimeter border are profiled, and during profiling, the hitting point of the laser beams on the perimeter border is cooled with a fluid.
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