| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser which can prevent a change in a polarization characteristic because of junction-down mounting while avoiding reduction of a heat dissipation, and also to provide a method of manufacturing the semiconductor laser. SOLUTION: A laser section 12 having two optical waveguides 13, 14 is formed on a semiconductor substrate 11. A recess 15 is formed in a chip end face in a region where an optical waveguide is not present between the optical waveguides 13, 14. When the structure is made by junction-down mounting, stresses applied onto the chip end faces of the optical waveguides 13, 14 from a solder junction between the adjacent optical waveguides respectively can be reduced. COPYRIGHT: (C)2009,JPO&INPIT
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