发明名称 SEMICONDUCTOR DEVICE
摘要 To improve noise immunity of a semiconductor device. A wiring substrate of a semiconductor device includes a first wiring layer where a wire is formed to which signals are sent, and a second wiring layer that is mounted adjacent to the upper layer or the lower layer of the first wiring layer. The second wiring layer includes a conductor plane where an aperture section is formed at a position overlapped with a portion of the wire 23 in the thickness direction, and a conductor pattern that is mounted within the aperture section of the conductor plane. The conductor pattern includes a main pattern section (mesh pattern section) that is isolated from the conductor plane, and plural coupling sections that couple the main pattern section and the conductor plane.
申请公布号 US2016190049(A1) 申请公布日期 2016.06.30
申请号 US201615059948 申请日期 2016.03.03
申请人 Renesas Electronics Corporation 发明人 KARIYAZAKI Shuuichi;OIKAWA Ryuichi
分类号 H01L23/498 主分类号 H01L23/498
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor chip including a obverse surface, a rear surface opposite the obverse surface, and an electrode pad formed on the obverse surface; a wiring substrate including a first main surface, a second main surface opposite the first main surface, a terminal formed on the first main surface and electrically connected with the electrode pad of the semiconductor chip which is mounted on the wiring substrate such that the obverse surface faces the first main surface of the wiring substrate; wiring layers including a first wiring layer and a second wiring layer; a first wire formed in the first wiring layer, the second wiring layer formed between the first main surface and the first wiring layer in a thickness direction; a first plate formed in the second wiring layer and having a first aperture section at a position overlapped with a portion of the first wire; and a first pattern formed within the first aperture section in the second wiring layer and having a plurality of openings, wherein the first pattern is electrically and mechanically connected with the first plate by way of a plurality of first coupling sections in the second wiring layer, and wherein an interval between two openings next to each other of the plurality of the openings is greater than or equal to a width of each of first coupling sections in a plan view.
地址 Tokyo JP