Electronic Device for ESD Protection

摘要

An electronic device includes a thyristor having an anode, a cathode, a first bipolar transistor disposed on the anode side. A second bipolar transistor is disposed on the cathode side. These two bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is coupled between the collector region and the emitter region of the second bipolar transistor. The transistor has a gate region connected to the cathode via a resistive semiconductor region incorporating at least a part of the base region of the second bipolar transistor.

主权项

1. A semiconductor device comprising:
a semiconductor film disposed over an insulating layer, the insulating layer being disposed over a carrier substrate; a first semiconductor region having a first conductivity type and being disposed in the semiconductor film; a second semiconductor region having a second conductivity type opposite the first conductivity type and being disposed in the semiconductor film adjacent the first semiconductor region; a gate region that extends over at least a portion of the second semiconductor region; a third semiconductor region having the second conductivity type and being disposed in the semiconductor film adjacent the first semiconductor region and spaced from the second semiconductor region by the first semiconductor region; a fourth semiconductor region having the first conductivity type and being disposed in the semiconductor film adjacent the second semiconductor region and spaced from the first semiconductor region by the second semiconductor region; a first metallization electrically connecting the gate region to a first location of the second semiconductor region; and a second metallization electrically connecting a second location of the second semiconductor region to the fourth semiconductor region, such that part of the second semiconductor region located between first and second locations forms a resistive semiconductor region.