METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE

摘要

An e-Fuse structure is provided on a surface of an insulator layer of a semiconductor-on-insulator substrate (SOI). The e-Fuse structure includes a first metal semiconductor alloy structure of a first thickness, a second metal semiconductor alloy structure of the first thickness, and a metal semiconductor alloy fuse link is located laterally between and connected to the first and second metal semiconductor alloy structures. The metal semiconductor alloy fuse link has a second thickness that is less than the first thickness.

主权项

1. A semiconductor structure comprising:
an e-Fuse structure located on a surface of an insulator layer of a semiconductor-on-insulator substrate (SOI), said e-Fuse structure comprising a first metal semiconductor alloy structure of a first thickness and having a non-vertical outermost sidewall that slopes outward from a topmost surface to a bottommost surface, a second metal semiconductor alloy structure of said first thickness and having a non-vertical outermost sidewall surface that slopes outward from a topmost surface to a bottommost surface, and a metal semiconductor alloy fuse link having a non-planar upper surface and located laterally between and in direct physical contact with said non-vertical outermost sidewall of each of said first and second metal semiconductor alloy structures and having a second thickness that is less than said first thickness.