SEMICONDUCTOR DEVICES INCLUDING A CONTACT STRUCTURE AND METHODS OF MANUFACTURING THE SAME

摘要

The semiconductor device may include an insulating interlayer on the substrate, the substrate including a contact region at an upper portion thereof, a main contact plug penetrating through the insulating interlayer and contacting the contact region, the main contact plug having a pillar shape and including a first barrier pattern and a first metal pattern, and an extension pattern surrounding on an upper sidewall of the main contact plug, the extension pattern including a barrier material. In the semiconductor device, an alignment margin between the contact structure and an upper wiring thereon may increase. Also, a short failure between the contact structure and the gate electrode may be reduced.

主权项

1. A semiconductor device, comprising:
an insulating interlayer on a substrate, the substrate including a contact region at an upper portion thereof, a main contact plug through the insulating interlayer and in contact with the contact region of the substrate, the main contact plug having a pillar shape and including a first barrier pattern and a first metal pattern; and an extension pattern surrounding an upper sidewall of the main contact plug, the extension pattern including a barrier material.