发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part. |
申请公布号 |
US2016315037(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201415103594 |
申请日期 |
2014.12.09 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA ;DENSO CORPORATION |
发明人 |
KADOGUCHI Takuya;HIRANO Takahiro;HARADA Arata;OKUMURA Tomomi;FUKUTANI Keita;NISHIHATA Masayoshi |
分类号 |
H01L23/495;H02M7/00;H01L29/861;H01L23/31;H01L29/739 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Toyota-shi, Aichi-ken JP |