发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first switching element; a second switching element; a first metal member; a second metal member; a first terminal that has a potential on a high potential side; a second terminal that has a potential on a low potential side; a third terminal that has a midpoint potential; and a resin part. A first potential part has potential equal to potential of the first terminal. A second potential part has potential equal to potential of the second terminal. A third potential part has potential equal to potential of the third terminal. A first creepage distance between the first potential part and the second potential part is longer than a minimum value of a second creepage distance between the first potential part and the third potential part and a third creepage distance between the second potential part and the third potential part.
申请公布号 US2016315037(A1) 申请公布日期 2016.10.27
申请号 US201415103594 申请日期 2014.12.09
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA ;DENSO CORPORATION 发明人 KADOGUCHI Takuya;HIRANO Takahiro;HARADA Arata;OKUMURA Tomomi;FUKUTANI Keita;NISHIHATA Masayoshi
分类号 H01L23/495;H02M7/00;H01L29/861;H01L23/31;H01L29/739 主分类号 H01L23/495
代理机构 代理人
主权项
地址 Toyota-shi, Aichi-ken JP