发明名称 METHODS FOR FORMING PATTERN USING CYCLIC PROCESSING
摘要 A method for forming a vertical pattern includes forming a tungsten layer on a lower layer and performing a cyclic process including an etch process and an oxidation process on the tungsten layer to form a vertical pattern. Performing the cyclic process includes oxidizing the tungsten layer by an oxidation process using oxygen plasma to form a tungsten oxide layer and selectively etching the tungsten oxide layer by an etch process using a chlorine-based gas.
申请公布号 US2016314981(A1) 申请公布日期 2016.10.27
申请号 US201615084479 申请日期 2016.03.30
申请人 Samsung Electronics Co., Ltd. 发明人 YOON Junho;JEON KyungYub;KIM Kyohyeok;PARK Jaehong;HAN Je-Woo
分类号 H01L21/3065;H01L21/02;H01L21/308 主分类号 H01L21/3065
代理机构 代理人
主权项 1. A method for forming a pattern, the method comprising: forming a tungsten layer on a lower layer; and performing a cyclic process comprising an etch process and an oxidation process on the tungsten layer to form a vertical pattern, wherein performing the cyclic process comprises: oxidizing the tungsten layer by the oxidation process using oxygen plasma to form a tungsten oxide layer; andselectively etching the tungsten oxide layer by the etch process using a chlorine-based gas, wherein each of the oxidation process and the etch process uses plasma generated by a first power applied to a top electrode and a second power applied to a bottom electrode, wherein the plasma used in the oxidation process is generated under a condition where the first power is greater than the second power, and wherein the plasma used in the etch process is generated under a condition where the second power is greater than the first power.
地址 Suwon-si KR