发明名称 |
METHODS FOR FORMING PATTERN USING CYCLIC PROCESSING |
摘要 |
A method for forming a vertical pattern includes forming a tungsten layer on a lower layer and performing a cyclic process including an etch process and an oxidation process on the tungsten layer to form a vertical pattern. Performing the cyclic process includes oxidizing the tungsten layer by an oxidation process using oxygen plasma to form a tungsten oxide layer and selectively etching the tungsten oxide layer by an etch process using a chlorine-based gas. |
申请公布号 |
US2016314981(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201615084479 |
申请日期 |
2016.03.30 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YOON Junho;JEON KyungYub;KIM Kyohyeok;PARK Jaehong;HAN Je-Woo |
分类号 |
H01L21/3065;H01L21/02;H01L21/308 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a pattern, the method comprising:
forming a tungsten layer on a lower layer; and performing a cyclic process comprising an etch process and an oxidation process on the tungsten layer to form a vertical pattern, wherein performing the cyclic process comprises:
oxidizing the tungsten layer by the oxidation process using oxygen plasma to form a tungsten oxide layer; andselectively etching the tungsten oxide layer by the etch process using a chlorine-based gas, wherein each of the oxidation process and the etch process uses plasma generated by a first power applied to a top electrode and a second power applied to a bottom electrode, wherein the plasma used in the oxidation process is generated under a condition where the first power is greater than the second power, and wherein the plasma used in the etch process is generated under a condition where the second power is greater than the first power. |
地址 |
Suwon-si KR |