WAFER SURFACE 3-D TOPOGRAPHY MAPPING BASED ON IN-SITU TILT MEASUREMENTS IN CHEMICAL VAPOR DEPOSITION SYSTEMS

摘要

The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.