发明名称 Electrostatic discharge circuit
摘要 An integrated circuit (IC) is disclosed. The IC includes a first global voltage node and a second global voltage node. The IC further includes two or more power domains each coupled to the first global voltage node. Each of the two or more power domains includes a functional unit and a local voltage node coupled to the functional unit. Each of the plurality of power domains further includes a power-gating transistor coupled between the local voltage node and the second global voltage node, and an ESD (electrostatic discharge) circuit configured to detect an occurrence of an ESD event and further configured to cause activation of the transistor responsive to detecting the ESD event.
申请公布号 US8400743(B2) 申请公布日期 2013.03.19
申请号 US20100827017 申请日期 2010.06.30
申请人 KOSONOCKY STEPHEN V.;ANDERSON WARREN R.;ADVANCED MICRO DEVICES, INC. 发明人 KOSONOCKY STEPHEN V.;ANDERSON WARREN R.
分类号 H02H9/00 主分类号 H02H9/00
代理机构 代理人
主权项
地址