METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent interconnection resistance of a gate electrode from increasing, by increasing a surface area of a silicide layer compared with a surface area of a polysilicon layer even if the size of the gate electrode is decreased. CONSTITUTION: A gate insulating layer(21) is formed on a semiconductor substrate(20). A conductive layer is formed on the gate insulating layer. The conductive layer is patterned to form a conductive layer pillar. A first silicide layer(24) is formed on a sidewall of the conductive layer pillar. A first impurity layer(26) is formed in the semiconductor substrate on both sides of the conductive layer pillar. A sidewall spacer(27) is formed at a side of the first silicide layer formed on the sidewall of the conductive layer pillar. A second impurity layer(28) is formed in the substrate existing at the outside of the sidewall spacer.