| 摘要 |
<p>A memory cell that includes two control gates disposed laterally between two floating gates where each floating gate is capable of holding data. The memory cell is formed by placing a first polysilicon on a substrate of semiconductor material, on which a well is placed. The control gates are preferably formed by a Damascene process, in which a first polysilicon is removed after forming two floating gates, and a second polysilicon is placed between these two floating gates. An anisotropic etching is later done on the second polysilicon to form two control gates.</p> |
