Semiconductor device, useful e.g. in field-effect transistors, comprises an aluminum-gallium-indium-nitrogen layer, aluminum-gallium-nitrogen intermediate layer, and another aluminum-gallium-indium-nitrogen layer

摘要

Semiconductor device comprises an aluminum-gallium-indium-nitrogen layer (A) (105); aluminum-gallium-nitrogen intermediate layer (B) (104) with a thickness of 1-15 nm; and another aluminum-gallium-indium-nitrogen layer (C) (103). Semiconductor device comprises an aluminum-gallium-indium-nitrogen layer (A) of formula (AlxGaylnzN) (105); aluminum-gallium-nitrogen intermediate layer (B) of formula (Alx3Ga1-x3N) (104) with a thickness of 1-15 nm; and another aluminum-gallium-indium-nitrogen layer (C) of (Alx1Gay1lnz1N) (103). Either x : greater than 0.35; and y : =0; and z : = 0.65; or x+y+z : 1; either y1 : greater than 0.5; or x1+y1+z1 : 1; and x3=0.3.