| 摘要 |
According to an aspect of the present invention, there is provided a semiconductor device including a non-volatile semiconductor memory device, including a memory cell having a electrolyte film, a first electrode and a second electrode, the electrolyte film being sandwiched between the first electrode and the second electrode, a material of the first electrode being different from a material of the second electrode, a bit line and a word line being configured as a matrix, a data-writing means having a first current source and a first counter, the first current source providing the first current to the memory cell, the first counter measuring a providing time of the first current, and a data-reading means having a second current source, a second counter and a potential sensor, the second current source providing a second current to the memory cell, the second current passing in opposed direction to the first current, the second counter measuring a providing time of the second current, the potential sensor detecting a potential, wherein writing data into the memory cell is performed by controlling the providing time of the first current corresponding to the data being written, reading the data from the memory cell is performed by detecting the providing time of the second current till a potential of the bit line equals to a prescribed potential.
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