发明名称 |
Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same |
摘要 |
The memory cell comprises a field effect memory transistor comprising a nanowire covered by a type of memory molecules and an access transistor of the same type. A source of the access transistor is connected to a drain of the memory transistor. The nanowire of the access transistor and the nanowire of the memory transistor can be formed by a single nanowire having two ends respectively forming a drain of the access transistor and a source of the memory transistor. The memory device comprises a plurality of memory cells, an access transistor gate being connected to a word line and a memory transistor gate being connected to a write line.
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申请公布号 |
US2008031034(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070798598 |
申请日期 |
2007.05.15 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
JALABERT ANTOINE |
分类号 |
G11C11/00;H01L29/76 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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