发明名称 High performance semiconductor module
摘要 <p>The power semiconductor module has a circuit carrier (2) and housing (1). The housing has two contact brackets (6) guiding outwards. Each of the contact brackets is electrically connected with an electrically conductive layer (7) such that all the connecting points, which are formed by the connection of the contact bracket with the layer, are arranged on the layer in a plane parallel to the circuit carrier. An independent claim is included for a method for manufacturing a power semiconductor module.</p>
申请公布号 EP2037500(A1) 申请公布日期 2009.03.18
申请号 EP20070017802 申请日期 2007.09.11
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KREUTZER, RAINER
分类号 H01L25/07 主分类号 H01L25/07
代理机构 代理人
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