| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluating a charged particle beam lithography device and a charged particle beam lithography device, capable of calculating a settling condition with high accuracy by drawing a measurement pattern image more accurately by suppressing the occurrence of a position error, caused by the movement of a charged particle beam to the possible extent. <P>SOLUTION: The method for evaluating a charged particle beam lithography device includes the steps of: storing control data for drawing a measurement pattern 11 into a storage 31i; on the basis of the control data, drawing the measurement pattern 11 using a charged particle beam B, and for each region in which the measurement pattern 11 is to be drawn hereafter, moving the charged particle beam B while shooting minute shots with substantially the same resolution as data up to a position in which the measurement pattern 11 is newly drawn; exposing after drawing the entire measurement pattern; on the basis of the measurement pattern 11 after the exposure, confirming the position error thereof; and on the basis of the confirmed position error, calculating an optimal settling condition. <P>COPYRIGHT: (C)2013,JPO&INPIT |
