SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can avoid complication of a manufacturing process and reduce costs by forming a thin film transistor by using an oxide semiconductor film typified by zinc oxide.SOLUTION: In a semiconductor device formed by the steps of: forming a gate electrode on a substrate; forming a gate insulation film to cover the gate electrode; forming an oxide semiconductor film on the gate insulation film; and forming a first conductive film and a second conductive film on the oxide semiconductor film, the oxide semiconductor film has at least a crystallized region in a channel formation region.SELECTED DRAWING: Figure 1