| 发明名称 |
METHOD FOR FORMING STAIR-STEP STRUCTURES |
| 摘要 |
A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times. |
| 申请公布号 |
US2016284555(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201514665815 |
申请日期 |
2015.03.23 |
| 申请人 |
Lam Research Corporation |
发明人 |
BAE In Deog;FU Qian |
| 分类号 |
H01L21/3065;H01L27/115;H01L21/3213;H01L29/66;H01L21/308;H01L21/311 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a stair-step structure in a substrate under an organic mask within a plasma processing chamber, comprising:
a) trimming the organic mask with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask; b) etching the substrate; and c) repeating steps a through b a plurality of times. |
| 地址 |
Fremont CA US |
