| 发明名称 |
GROUP III-V COMPOUND SEMICONDUCTOR NANOWIRE, FIELD EFFECT TRANSISTOR, AND SWITCHING ELEMENT |
| 摘要 |
The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (−110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction. |
| 申请公布号 |
US2016284536(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201415031575 |
申请日期 |
2014.10.29 |
| 申请人 |
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY ;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUKUI Takashi;TOMIOKA Katsuhiro |
| 分类号 |
H01L21/02;H01L29/66;H01L29/775;H01L29/20;H01L29/06;H01L29/04;H01L29/16 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A group III-V compound semiconductor nanowire which is a nanowire formed of a III-V compound semiconductor, wherein:
a side surface of the group III-V compound semiconductor nanowire is a (−110) surface composed of a micro (111) surface, and a roughness of the side surface of the group III-V compound semiconductor nanowire falls within a range of 1 to 6 atomic layers. |
| 地址 |
Sapporo-shi, Hokkaido JP |
