发明名称 POLISHING SLURRIES FOR COPPER AND ASSOCIATED MATERIALS
摘要 A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
申请公布号 WO0183638(A1) 申请公布日期 2001.11.08
申请号 WO2001US13896 申请日期 2001.04.27
申请人 ADVANCED TECHNOLOGY MATERIALS, INC.;WOJTCZAK, WILLIAM, A.;BAUM, THOMAS, H.;NGUYEN, LONG;REGULSKI, CARY 发明人 WOJTCZAK, WILLIAM, A.;BAUM, THOMAS, H.;NGUYEN, LONG;REGULSKI, CARY
分类号 C09C1/68;C09G1/02;H01L21/321;(IPC1-7):C09K3/14;H01L21/00;B24B1/00 主分类号 C09C1/68
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