| 摘要 |
A redundancy circuitry is used in a memory device for repairing defects in a packaged memory having registers by using antifuse. The redundancy circuitry includes: an anticell for storing data to be replaced; a temporary anticell for storing the data temporarily; a row and a column antifuse composed of antifuse and anti enable fuse corresponding to a row and column address, respectively; an antifuse controller for controlling the programming of the antifuse; a voltage supplier for supplying a voltage to program the antifuse; a row and a column comparators for comparing the programmed row and column antifuses and the external input address, respectively; an anti-controller for controlling to provide data from the anticell on a read operation and to temporarily store the external data to the temporary anticell on a write operation based on the comparison signals; a restore controller for, based on the row address on a restore operation, transferring the external data identical to the programmed fuse address to the anticell; and a channel selection memory for storing the channel address for pre-fetch and restore operations provided during read and write operations.
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