发明名称 High resistance poly(3,4-ethylenedioxythiophene)/poly (styrene sulfonate) for use in high efficiency pixellated polymer electroluminescent devices
摘要 High resistance PEDT/PSS buffer layers are provided for use in electroluminescent devices such as, e.g., OLEDs. In accordance with another embodiment, there are provided OLEDs comprising high resistance PEDT/PSS buffer layers. In accordance with a further embodiment, methods have been developed for decreasing the conductivity of a PEDT/PSS layer cast from aqueous solution onto a substrate, by adding a cyclic ether co-solvent to the aqueous solution of PEDT/PSS prior to casting. In one embodiment, there are provided methods for decreasing the inherent conductivity of a PEDT/PSS layer cast onto a substrate so that this material can be used as an intermediate buffer layer in red, green, blue organic light emitting diodes (RGB OLEDs).
申请公布号 US2006219982(A1) 申请公布日期 2006.10.05
申请号 US20050265604 申请日期 2005.11.02
申请人 ZHANG CHI 发明人 ZHANG CHI
分类号 H01B1/12;C08L65/00;C09D165/00;H01L51/30 主分类号 H01B1/12
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