发明名称 |
Diffusion barrier layer for MEMS devices |
摘要 |
Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
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申请公布号 |
US2007096300(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050261236 |
申请日期 |
2005.10.28 |
申请人 |
WANG HSIN-FU;TUNG MING-HAU;ZEE STEPHEN |
发明人 |
WANG HSIN-FU;TUNG MING-HAU;ZEE STEPHEN |
分类号 |
H01L23/10;H01L21/00;H01L23/043 |
主分类号 |
H01L23/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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