| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve an active layer and an element structure having superior emission efficiency in a short wavelength region of 380 nm in a semiconductor device, particularly in a light-emitting element that uses a nitride semiconductor and a laser element. <P>SOLUTION: In the semiconductor device with the structure that an active layer 12 of a quantum well structure, including a well layer 1 and a barrier layer 2 is sandwiched by a first conductivity-type layer 11 and a second conductivity-type layer 12, a first barrier layer 2a is provided at the side of the first conductivity-type layer 11 and a second barrier layer 2b is provided at the side of the second conductivity-type layer 12, sandwiching at least one well layer 1a in the active layer. The second barrier layer 2b has band gap energy smaller than that of the first barrier layer 2a, and the barrier layer is asymmetric. More preferably, since a carrier confinement layer 28, having a band gap energy larger than that of the first barrier layer 2a in the second conductivity-type layer 12, a band structure facing an asymmetric structure of the active layer is provided in each conductive type layer sandwiching the active layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
