Semiconductor device

摘要

A semiconductor is provided with: a silicon substrate 2 a of a first conductivity type, including a first surface S 1 a and a second surface S 2 a; a silicon layer 4 a of a second conductivity type, arranged on the first surface S 1 a of the silicon substrate 2 a, including a third surface S 3 a opposite a junction surface with the silicon substrate 2 a; a first electrode 12 a arranged on the second surface S 2 a; a second electrode 14 a arranged on the third surface S 3 a; and an argon added area 6 a formed in a semiconductor area formed of the silicon substrate 2 a and the silicon layer 4 a. The argon added area 6 a includes an area indicating an argon concentration of a minimum of 1x10¹⁸ cm^-3 and a maximum of 2x10²⁰ cm^-3.