| 摘要 |
Disclosed is a word line driving circuit which includes a first MOS transistor and a second MOS transistor having mutually different conductivity types and a third MOS transistor of a conductivity type which is the same as that of the first MOS transistor. Gates of the first and second MOS transistors are connected in common for receiving an input signal. Sources of the first and second MOS transistors are connected to a first power supply and a second power supply, respectively. The third MOS transistor is connected between a drain of the first MOS transistor and a drain of the second MOS transistor. A connection node between the drain of the second MOS transistor and a drain of the third MOS transistor is connected to a word line. When the input signal is set to a high level and when the second transistor is turned on, a potential lower than a high level of the input signal is supplied to a gate of the third MOS transistor. A signal with a high level thereof being lower than a high level of the input signal, or a fixed GND potential is supplied to the gate of the third MOS transistor.
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