METHOD FOR FABRICATING INTERCONNECTION IN SEMICONDUTOR DEVICE

摘要

A wiring formation method of a semiconductor device is provided to suppress that the boron layer is formed between the tungsten nuclei grown layer and bulk tungsten layer in order to raise adhesive force of a tungsten layer. An interlayer insulating film(110) is formed on a semiconductor substrate(100). Before the interlayer insulating film is formed, a memory device like DRAM set up an active area in the semiconductor substrate by an element isolation film performed with the shallow trench isolation. A transistor including a source/drain region and gate electrode is formed in the active area of the semiconductor substrate. The interlayer insulating film exposed by an etching mask is selectively etched and a bit line contact hole(111) is formed. A bonding layer(120) is formed on the semiconductor substrate in which the bit line contact hole is formed. The bonding layer is formed in order to include a titanium film and tinanium nitride film. The titanium film improves the adhesive force of the following tungsten nuclei grown layer.