| 摘要 |
An MOS field effect transistor comprising an AlN layer (2) having a nitrogen face and relieved from stress, an Al x Ga 1-x N (0 ‰¦x< 1) layer (3) formed on the nitrogen face, source/drain electrodes (5,6) having an ohmic electrode formed on the Al x Ga 1-x N layer (3), an oxide region (4) formed between the source/drain electrodes (5,6), and a gate electrode (7) formed on the oxide region (4).
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