Semiconductor light emitting device having patterns

摘要

A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.

主权项

1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a substrate structure; forming a semiconductor layer on the substrate structure, the semiconductor layer including a light emitting layer; forming an electrode on a surface of the semiconductor layer; and performing a frost process on the surface of the semiconductor layer to form a frost-processed layer including a rough uneven portion and a microstructural uneven portion on the surface of the semiconductor layer at a side of the electrode, the performing the frost process includes performing a first frost process to form the rough uneven portion and performing a second frost process to form the microstructural uneven portion.