Semiconductor devices including conductive features with capping layers and methods of forming the same

摘要

Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an insulating material layer over a workpiece, the insulating material layer comprising a silicon carbide (SiC)-rich material comprising about 13% or greater of carbon (C); patterning the insulating material layer; forming a conductive feature in the insulating material layer; and forming a capping layer on a top surface of the conductive feature, wherein forming the capping layer comprises forming a material selected from the group consisting essentially of Co, Rh, Ir, Fe, Ni, and combinations thereof, at least a portion of the capping layer extending below a top surface of the insulating material layer.