Semiconductor device producing method

摘要

In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.

主权项

1. A producing method for a semiconductor device, the semiconductor device having:
a first semiconductor substrate having a connection portion adjacent to a surface of the first semiconductor substrate to be connected to an element; and a second semiconductor substrate bonded to the surface of the first semiconductor substrate, wherein the second semiconductor substrate includes a through electrode structure having a through hole formed in the second semiconductor substrate from a front surface opposite to the first semiconductor substrate and a conductive layer disposed in the through hole and connected to the connection portion, the producing method comprising: preparing the first semiconductor substrate formed with the element and the connection portion; bonding the second semiconductor substrate to the surface of the first semiconductor substrate; after the bonding of the second semiconductor substrate to the surface of the first semiconductor substrate, forming the through hole by etching the second semiconductor substrate from the front surface opposite to the first semiconductor substrate at a position corresponding to the connection portion of the second semiconductor substrate; forming an insulating film on the front surface of the second semiconductor substrate, including an inner wall surface of the through hole and the connection portion exposed from the through hole; after the forming of the insulating film, arranging a first masking material on the insulating film so that the first masking material bridges over the through hole while remaining an inside of the through hole as a cavity; forming a hole in the first masking material at a position corresponding to the through hole by photolithography; forming a contact hole in the insulating film to expose the connection portion for contacting the connection portion with the conductive layer, by removing the insulating film at a position corresponding to the hole through the hole by an anisotropic dry etching using the first masking material; after the forming of the contact hole, contacting the conductive layer with the connection portion through the contact hole by forming the conductive layer on a surface of the insulating film including an inside of the contact hole; after the forming of the conductive layer, arranging a second masking material on the conductive layer so that the second masking material bridges over the through hole while remaining the inside of the through hole as a cavity; forming an opening in the second masking material at a position corresponding to an unnecessary portion of the conductive layer by photolithography; and patterning the conductive layer by removing the unnecessary portion of the conductive layer by etching using the second masking material.