Error correction in differential memory devices with reading in single-ended mode in addition to reading in differential mode

摘要

A differential memory device includes of memory locations having a direct memory cell and a complementary memory cell. A corresponding method includes receiving a request of reading a selected data word associated with a selected code word, reading a differential code word representing a differential version of the selected code word, verifying the differential code word according to an error correction code, setting the selected data word according to the differential code word in response to a positive verification. The method further includes reading at least one single-ended code word representing a single-ended version of the selected code word, verifying the single-ended code word according to the error correction code, and setting the selected data word according to the single-ended code word in response to a negative verification of the differential code word and to a positive verification of the single-ended code word.

主权项

1. A method for reading a differential memory device comprising a plurality of memory locations each comprising a direct memory cell and a complementary memory cell, the method comprising:
receiving a request of reading a selected data word associated with a selected code word comprising a plurality of logic values stored in at least one selected memory location with an error correction code; reading a differential code word representing a differential version of the selected code word by comparing a state of the direct memory cell with a state of the complementary memory cell of each selected memory location; verifying the differential code word according to the error correction code; setting the selected data word according to the differential code word in response to a positive verification of the differential code word; reading at least one single-ended code word representing a single-ended version of the selected code word by at least one of comparing the state of the direct memory cell of each selected memory location with a direct reference and comparing the state of the complementary memory cell of each selected memory location with a complementary reference; verifying the single-ended code word according to the error correction code; and setting the selected data word according to the single-ended code word in response to a negative verification of the differential code word and to a positive verification of the single-ended code word.