SEMICONDUCTOR LIGHT-EMITTING STRUCTURE

摘要

A semiconductor light-emitting structure including a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a magnetic layer is provided. The light-emitting layer is disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The first electrode is electrically connected to the first-type doped semiconductor layer, and the second electrode is electrically connected to the second-type doped semiconductor layer. The magnetic layer connects the first electrode and the first-type doped semiconductor layer. At least a portion of the magnetic layer is magnetic, and the bandgap of at least another portion of the magnetic layer is greater than 0 eV and is less than or equal to 5 eV. The material of the magnetic layer includes metal, metal oxide, or a combination thereof.

主权项

1. A semiconductor light-emitting structure, comprising:
a first-type doped semiconductor layer; a second-type doped semiconductor layer; a light-emitting layer disposed between the first-type doped semiconductor layer and the second-type doped semiconductor layer; a first electrode electrically connected to the first-type doped semiconductor layer; a second electrode electrically connected to the second-type doped semiconductor layer; and a magnetic layer connecting the first electrode and the first-type doped semiconductor layer, wherein at least a portion of the magnetic layer is magnetic, and a bandgap of at least another portion of the magnetic layer is greater than 0 eV and is less than or equal to 5 eV, and a material of the magnetic layer comprises metal, metal oxide, or a combination thereof.