METHOD FOR PRODUCING SEMICONDUCTOR LIGHT RECEIVING DEVICE

摘要

A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including first and second semiconductor layers stacked alternately; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure having a side surface exposed in an atmosphere; forming a deposited layer on the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing silicon generated from the silicon raw material; and, after the step of forming the deposited layer, forming a passivation film on the side surface of the mesa structure. The first semiconductor layer contains gallium as a constituent element. In the step of forming the deposited layer, the silicon raw material is supplied without supplying an oxygen raw material containing an oxygen element.

主权项

1. A method for producing a semiconductor light receiving device, the method comprising the steps of:
growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately; forming a mask on the stacked semiconductor layer; forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere; forming a deposited layer on the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing silicon generated from the silicon raw material; and after the step of forming the deposited layer, forming a passivation film on the side surface of the mesa structure, wherein the first semiconductor layer contains gallium as a constituent element, the second semiconductor layer contains a material different from a material of the first semiconductor layer, and in the step of forming the deposited layer, the silicon raw material is supplied without supplying an oxygen raw material containing an oxygen element.