发明名称 |
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film. |
申请公布号 |
US2016172503(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201615051786 |
申请日期 |
2016.02.24 |
申请人 |
Japan Display Inc. |
发明人 |
HIRAMATSU Masato;FUCHI Masayoshi;ISHIDA Arichika |
分类号 |
H01L29/786;H01L21/443;H01L29/66;H01L29/24 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing a thin-film transistor comprising:
forming an oxide semiconductor layer on a part of a substrate; forming a gate insulator film of a silicon dioxide film on the oxide semiconductor layer and the substrate by performing a surface treatment with oxygen plasma and by forming a film by the CVD method with a TEOS source gas; and forming a gate electrode on the gate insulator film. |
地址 |
Minato-ku JP |