| 发明名称 |
RECESSED OHMIC CONTACTS IN A III-N DEVICE |
| 摘要 |
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer. The conductive contact comprises a top side facing away from the lower side of the III-N layer, and a bottom side facing towards the lower side of the III-N layer. The bottom side includes a first end and a second end opposite the first end, a first side rising from the first end to an intermediate point closer to the top side than the first end, and a second side falling from the intermediate point to the second end further from the top side than the intermediate point. |
| 申请公布号 |
US2016172455(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201414572670 |
申请日期 |
2014.12.16 |
| 申请人 |
Transphorm Inc. |
发明人 |
Kikkawa Toshihide;Kiuchi Kenji;Hosoda Tsutomu;Kanamura Masahito;Mochizuki Akitoshi |
| 分类号 |
H01L29/417;H01L29/20;H01L29/66;H01L21/308;H01L21/324;H01L29/778;H01L21/3065 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a III-N layer having an upper side and a lower side, the lower side being opposite the upper side; and at least one conductive contact on the upper side of the III-N layer, the conductive contact extending into the III-N layer, the conductive contact comprising:
a top side facing away from the lower side of the III-N layer; anda bottom side facing towards the lower side of the III-N layer, the bottom side comprising:
a first end and a second end opposite the first end;a first side rising from the first end to an intermediate point closer to the top side than the first end; anda second side falling from the intermediate point to the second end, the second end being further from the top side than the intermediate point. |
| 地址 |
Goleta CA US |
