FINFET WITH A SILICON GERMANIUM ALLOY CHANNEL AND METHOD OF FABRICATION THEREOF

摘要

A gate cavity is formed exposing a portion of a silicon fin by removing a sacrificial gate structure that straddles the silicon fin. An epitaxial silicon germanium alloy layer is formed within the gate cavity and on the exposed portion of the silicon fin. Thermal mixing or thermal condensation is performed to convert the exposed portion of the silicon fin into a silicon germanium alloy channel portion which is laterally surrounded by silicon fin portions. A functional gate structure is formed within the gate cavity providing a finFET structure having a silicon germanium alloy channel portion which is laterally surrounded by silicon fin portions.

主权项

1. A semiconductor structure comprising:
a semiconductor fin comprising a silicon germanium alloy channel portion positioned laterally between a silicon fin source portion and a silicon fin drain portion; and a functional gate structure straddling said semiconductor fin and located directly above said silicon germanium alloy channel portion.