发明名称 SOLID-STATE IMAGING APPARATUS
摘要 An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion.;The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.
申请公布号 US2016172408(A1) 申请公布日期 2016.06.16
申请号 US201514960229 申请日期 2015.12.04
申请人 CANON KABUSHIKI KAISHA 发明人 Onuki Yusuke;Kobayashi Masahiro;Miki Takafumi
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state imaging apparatus in which a plurality of pixels are laid out in a matrix form, each of the pixels having an imaging region having a photoelectric conversion portion, a first transfer transistor configured to transfer electric carriers from the photoelectric conversion portion, an electric-carrier accumulation portion to which the electric carriers are transferred from the first transfer transistor, a second transfer transistor configured to transfer electric carriers accumulated in the electric-carrier accumulation portion, and a floating diffusion to which the electric carriers are transferred from the second transfer transistor, the solid-state imaging apparatus comprising: an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and the floating diffusion, and an element isolation region having an insulator defining the active region; and in planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.
地址 Tokyo JP