DESIGNED-BASED INTERCONNECT STRUCTURE IN SEMICONDUCTOR STRUCTURE

摘要

Semiconductor structures are provided. The semiconductor structure includes a plurality of gate structures extending in a first direction formed over a substrate. The gate structures follow the following equation:;0.2Pgatemin+0.35Lgatemin+0.3Hgatemin-200.2Lgatemin+0.8Hgatemin-5×0.3Lgatemin+0.3Hgatemin+538≤0.32;Pgate min is the minimum value among gate pitches of the gate structures, and Lgate min is the minimum value among gate lengths of the gate structures. Hgate min is the minimum value among gate heights of the gate structures.

主权项

1. A semiconductor structure, comprising:
a plurality of gate structures extending in a first direction formed over a substrate, wherein the gate structures follow the following equation:0.2Pgatemin+0.35Lgatemin+0.3Hgatemin-200.2Lgatemin+0.8Hgatemin-5×0.3Lgatemin+0.3Hgatemin+538≤0.32 wherein Pgate min is the minimum value among gate pitches of the gate structures; Lgate min is the minimum value among gate lengths of the gate structures; and Hgate min is the minimum value among gate heights of the gate structures.