发明名称 |
Integrated Power Assembly with Stacked Individually Packaged Power Devices |
摘要 |
An integrated power assembly is disclosed. The integrated power assembly includes a first leadframe having partially etched segments, a first semiconductor die configured for attachment to a partially etched segment of the first leadframe, a second leadframe having a legless conductive clip coupled to a top surface of the first semiconductor die. The integrated power assembly also includes a third leadframe over the second leadframe and having a partially etched segment, a second semiconductor die configured for attachment to the partially etched segment of the third leadframe, wherein the second semiconductor die is coupled to the first semiconductor die through the partially etched segment of the third leadframe, and wherein the partially etched segment of the third leadframe is situated on the legless conductive clip of the second leadframe. |
申请公布号 |
US2016172284(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201514938749 |
申请日期 |
2015.11.11 |
申请人 |
Infineon Technologies Americas Corp. |
发明人 |
Cho Eung San |
分类号 |
H01L23/495 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated power assembly comprising:
a first leadframe having partially etched segments; a first semiconductor die configured for attachment to a partially etched segment of said first leadframe; a second leadframe having a legless conductive clip coupled to a top surface of said first semiconductor die; a third leadframe over said second leadframe and having a partially etched segment; a second semiconductor die configured for attachment to said partially etched segment of said third leadframe; wherein said second semiconductor die is coupled to said first semiconductor die through said partially etched segment of said third leadframe. |
地址 |
EI Segundo CA US |