FINFET STRUCTURE AND METHOD FOR MANUFACTURING THEREOF

摘要

The present invention provides a FinFET structure including a fin and a gate surrounding a first portion of the fin. A dopant concentration of the first portion of the fin is lower than 1E17/cm^3. The FinFET structure comprises an insulation layer surrounding a second portion of the fin. A dopant concentration of the second portion of the fin is higher than 8E15/cm^3. The insulation layer comprises a lower layer and an upper layer. The lower layer is arranged on a substrate connected to the fin. The lower layer has a dopant concentration higher than 1E19/cm^3.