发明名称 |
METHOD OF FORMING A LAYER AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME |
摘要 |
In a method of forming a layer and a method of manufacturing a capacitor using the same, a preliminary zirconium oxide film is formed on a substrate by introducing a first reactant including a zirconium precursor, and a first oxidant onto the substrate. A thermal treatment is performed on the preliminary zirconium oxide film to form a first zirconium oxide film having a dense and crystalline structure. An aluminum oxide film is formed on the first zirconium oxide film by introducing a second reactant including an aluminum precursor, and a second oxidant onto the substrate. The thermally-treated layer including the first zirconium oxide film and the aluminum oxide film may form a dielectric layer of a capacitor.
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申请公布号 |
US2007098892(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20060468932 |
申请日期 |
2006.08.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG EUN-AE;YOON KYOUNG-RYUL;IM KI-VIN;YEO JAE-HYUN;KIM SUNG-TAE;KIM YOUNG-SUN;PARK YOUNG-GEUN |
分类号 |
C23C16/00;B05D3/02;B05D5/12 |
主分类号 |
C23C16/00 |
代理机构 |
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主权项 |
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