发明名称 |
METHODS FOR ERASING AND PROGRAMMING MEMORY DEVICES |
摘要 |
A dual-bit memory device includes a first charge storage region (164A) spaced apart from a second charge storage region (164B) by an isolation region (170). Techniques for erasing a memory can be provided in which electrons can be injected into the charge storage regions (164 A, B) to erase the charge storage regions (164 A, B). Other techniques for programming a memory can be provided in which holes can be injected into at least one of the charge storage regions (164 A, B) to program the charge storage regions (164 A, B). |
申请公布号 |
WO2007114955(A3) |
申请公布日期 |
2008.02.07 |
申请号 |
WO2007US08683 |
申请日期 |
2007.04.05 |
申请人 |
SPANSION LLC;DING, MENG;LIU, ZHIZHENG;ZHENG, WEI |
发明人 |
DING, MENG;LIU, ZHIZHENG;ZHENG, WEI |
分类号 |
G11C16/04;G11C11/56 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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