| 摘要 |
This invention relates to a photovoltaic device including a front contact and/or a method of making the same. In certain example embodiments, the transparent conductive oxide (TCO) front contact is of indium zinc oxide (IZO). In other example embodiments, the IZO may have other element(s) such as silver (Ag) added thereto so that the front contact may be of or include zinc aluminum silver oxide (ZnAlAgO) for example. Moreover, in certain example embodiments the front contact (e.g., IZO or ZnAlAgO) maybe sputter-deposited in an oxygen deficient form (substoichiometric); so that subsequent heat treatment or baking used in the photovoltaic device manufacturing (e.g., for subsequent layer formation) results in an optimal stoichiometry which may or may not be substoichiometric in the final product. |
