MANUFACTURING METHOD FOR HETERO STRUCTURE FIELD EFFECT TRANSISTOR,申请号KR20020010306-传众专利搜索

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发明名称	MANUFACTURING METHOD FOR HETERO STRUCTURE FIELD EFFECT TRANSISTOR
摘要
申请公布号	KR100815422(B1)	申请公布日期	2008.03.20
申请号	KR20020010306	申请日期	2002.02.26
申请人		发明人
分类号	H01L29/778	主分类号	H01L29/778
代理机构		代理人
主权项
地址

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