| 摘要 |
Semiconductor devices and processes for forming the same. The semiconductor device includes field isolation regions within trenches lying within a semiconductor device substrate. The trenches include a first trench and a second trench. The device includes a first component region and a second component region. The first component region lies near the first trench, and the second component region lies near the second trench. The semiconductor device includes a feature selected from a group consisting of: (a) a first liner within the first trench, and a second liner within the second trench, wherein the first liner is significantly thicker than the second liner; and (b) the first component region has a first edge with a first radius of curvature near the first trench, and the second component has a second edge with a second radius of curvature near the second trench, wherein the first radius of curvature is significantly greater than the second radius of curvature.
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