发明名称 |
NITRIDE NANOWIRES AND METHOD OF PRODUCING SUCH |
摘要 |
The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor. |
申请公布号 |
WO2008085129(A1) |
申请公布日期 |
2008.07.17 |
申请号 |
WO2008SE50036 |
申请日期 |
2008.01.14 |
申请人 |
QUNANO AB;SEIFERT, WERNER;ASOLI, DAMIR |
发明人 |
SEIFERT, WERNER;ASOLI, DAMIR |
分类号 |
H01L21/20;B82B1/00;B82B3/00;C30B25/00;H01L29/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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